Supermicro PX03SN Series Enterprise Read-Intensive SSD (1.6TB)

Supermicro PX03SN Series Enterprise Read-Intensive SSD (1.6TB)

Supermicro PX03SN Series Enterprise Read-Intensive SSD (1.6TB)

B&H # SUPX03SNB160 MFR # PX03SNB160
Supermicro PX03SN Series Enterprise Read-Intensive SSD (1.6TB)

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Supermicro PX03SNB160 overview

  • 1Description

The 1.6TB PX03SN Series Enterprise Read Intensive SSD from Supermicro is optimized for read-intensive and low-write-duty applications in server and storage systems. It features a 12 Gb/s SAS interface and built-in MLC NAND flash memory. The drive delivers random write speeds up to 26,000 IOPS and random read speeds up to 130,000 IOPS. This enterprise-class SSD is suitable for cost sensitive and read-intensive applications characterized with infrequent write operations or predominantly large block and sequential data pattern workloads.

Offers up to 1.6TB storage capacity
Built-in MLC NAND flash memory
Dual-port 12 Gbit/s SAS interface
Supports one DWPD (Drive Write per Day) with a 100% random data
Power Loss Protection
Quadruple Swing by Code Technology (QSBC)
Applications: High-performance enterprise storage, Cloud computing, data warehousing, media streaming & VOD (Video on Demand), file servers, and Web-based applications
UPC: 672042186846
In the Box
Supermicro PX03SN Series Enterprise Read-Intensive SSD (1.6TB)
  • Limited 3-Year Warranty
  • Table of Contents
    • 1Description

    Supermicro PX03SNB160 specs

    Drive Capacity 1.6 TB
    Cache Memory Not Specified by Manufacturer
    Pre-Format Not Specified by Manufacturer
    Interface SAS III (12 Gb/s)
    Maximum Read Speed Not Specified by Manufacturer
    Maximum Write Speed Not Specified by Manufacturer
    Random Read Speed 130,000 IOPS (4 KB Files)
    Random Write Speed 26,000 IOPS (4 KB Files)
    Sequential Read Speed 1060 MB/s (64 KB Files)
    63,000 IOPS (4 KB Files)
    Sequential Write Speed 380 MB/s (64 KB Files)
    Drive Type SSD
    Form Factor PCIe card
    SSD Specs
    Flash Memory Type  Multi-Level Cell (MLC)
    Lithography 19 nm
    Reliability / Data Integrity
    Annualized Failure Rate (AFR) 0.44 %
    Endurance (Total Bytes Written) 2920.0TB
    Mean Time Between Failures (MTBF) 2.0 Million Hours
    Non-Recoverable Read Errors per Bits Read 1 in 1017
    Power Draw 3.6 W (Active)
    Supported Voltage 5 VDC, 12 VDC
    Operating Shock 1000 G / 0.5 ms
    Storage Shock 1000 G / 0.5 ms
    Operating Vibration 2.17 G / 5 to 800 Hz
    Storage Vibration 16.3 G / 20 to 2000 Hz
    Operating Temperature 32 to 131°F / 0 to 55°C
    Storage Temperature -40 to 158°F / -40 to 70°C
    Operating Humidity 5 to 95%
    Storage Humidity 5 to 95%
    Operating Altitude -1,000 to 18,000' / -305 to 5486 m
    Storage Altitude -1,000 to 40,000' / -304.8 to 12,192 m
    Dimensions (W x H x D) 2.8 x 0.6 x 4.0" / 69.8 x 15.0 x 100.5 mm
    Weight 6 oz / 170 g

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