The Samsung 3.84TB PM863 Series Internal Enterprise SATA SSD uses V-NAND flash memory technology that stacks 32 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space to provide high density and performance in a small footprint. It offers sequential read and write speeds of up to 540 MB/s and 480 MB/s respectively. The SSD offers random read and write speeds of up to 99,000 IOPS and 18,000 IOPS respectively.
Compatibility
LSI/ATTO/SuperMicro
Built for read-intensive enterprise applications with Samsung's 3-bit MLC V-NAND
Offers 99,000 IOPS random read speed and 18,000 IOPS random write speed
Tantalum capacitors for power loss protection
Low latency and high QoS (quality of service)